A -31dBc Integrated-Phase-Noise 29GHz Fractional-N Frequency Synthesizer Supporting Multiple Frequency Bands for BackwardCompatible 5G Using a Frequency Doubler and Injection-Locked Frequency Multipliers

Date(s):

Location:
Jacobs Hall, Room 2512, Jacobs School of Engineering, 9500 Gilman Dr, La Jolla, San Diego, California 92093

Sponsored By:
Prof. Ian Galton

Speaker(s):
Heein Yoon
Heein Yoon

Abstract:

This work presents a multi-band LO-generator that can support existing cellular bands below 6GHz and new millimeter-wave (mmW) bands for 5G, concurrently. Using a low-noise reference-frequency doubler, a fractional-N PLL generates GHz-range signals with low integrated phase noise (IPN). Then, injection-locked frequency multipliers increase these frequencies to mmW-bands without the degradation of IPN. The measured IPN and RMS jitter of the 29GHz signal were −31.4dBc and 206fs, respectively, which is the lowest among the state-of-the-art mmW-band fractional-N frequency synthesizers. This IPN is low enough to satisfy the EVM requirement of higher-order modulation for 5G systems. This frequency synthesizer also can generate various frequencies in multiple bands, including existing bands below 6GHz and new mmW band around 28GHz


Speaker Bio:
Heein Yoon was born in Jeonju, South Korea, in 1992. She received the B.S. degree (summa cum laude) in electrical engineering from the Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea, in 2014, where she has been pursuing the Ph.D. degree since 2014. She is currently an Intern with Qualcomm, San Diego, CA, USA, focusing on the PLLs in the RX/TX transceiver. She was the recipient of student-research preview (SRP) award winner at the 2018 ISSCC. Her current research interests include RF, analog/mixed IC designs, and clock/frequency generation systems for emerging wireless/wired standards.

Contact:
Bethany Carson
bacarson@eng.ucsd.edu
Phone: 858-822-6347