Challenges of GaN Epitaxy for Power Electronics


Jacobs Hall, Room 2512, Jacobs School of Engineering, 9500 Gilman Dr, La Jolla, San Diego, California 92093

Sponsored By:
Shadi Dayeh

Yu Cao
Yu Cao

Speaker Bio:
Yu Cao received the Ph.D degree in Electrical Engineering at the University of Notre Dame in 2010. His research interests include MBE growth of GaN, GaN RF devices fabrication, charge transport theory, etc. After graduation he joined the Kopin Corporation in MA, which was later acquired by IQE. As a staff scientist, he focused on MOCVD epitaxy development of GaN-on-Si HEMTs for RF and power applications, as well as GaAs-based HBTs, BiHEMTs and pHEMTs for power amplifier applications. In 2014 He joined HRL Lab. He is currently a Research Staff Scientist, working on the epitaxy and devices application of vertical GaN transistors. He is a senior member of IEEE, and has authored and co-authored 3 books/book chapter, more than 100 peer-reviewed journal and conference papers.

Cheryle Wills
Jacobs Hall, Room 2903
Tel: 858-534-2498