Electronic Devices within Single Atomic Layer – Development of 2D Lateral Junctions


Jacobs Hall, Room 2512, Jacobs School of Engineering, 9500 Gilman Dr, La Jolla, San Diego, California 92093

Sponsored By:
Prof. Yuhwa Lo

Dr. Jr-Hau He
Electrical Engineering Program
King Abdullah University of Science and Technology
Dr. Jr-Hau He


With the demanding requirement of nanotechnology in the semiconducting industry, the challenge will become unprecedented as the fabrication approaches the scaling limit in the next few years. The rise of 2D materials seems to be a probable solution for developing the next-generation semiconducting devices. As 2D lateral junctions bring a revolutionary breakthrough in the past few years, nanoscale sized devices are no longer limited to the vertical direction. Doping and structural design strategies that are totally different from conventional Si based devices can bring about more ideal and ultra-efficient electronic and optoelectronic devices. This perspective summarizes and compares different methods of 2D lateral junction designs (including electrostatic tunable p-n homojunction and direct growth of in-plane p-n heterojunction) and various material combinations (including metallic-insulating, semiconducting p-n, and ohmic junctions). In addition, examples of design strategies and what can be achieved by adopting these 2D lateral junctions have been provided to show the promising potential for the future development. It can be expected that over the next few years, 2D materials will dominate the semiconducting industry and holds the promise for keeping the Moore’s law alive.

Speaker Bio:
Dr. Jr-Hau He is an Associate Professor of Electrical Engineering program at King Abdullah University of Science & Technology (KAUST). He was a tenured Associate Professor at National Taiwan University (2007-2014). His work encompasses a broad, multidisciplinary field, borrowing from electrical, physics, chemical and materials science and engineering to understand the effects of 2D nanomaterials on the performance of advanced devices. He devotes his efforts in the development of transparent and flexible electronics using novel devices based on nanomaterials, including solar cells and photodetectors, LEDs, and memory devices. He has garnered over 7100 citations for a body of work consisted of ~190 peer reviewed journal articles with 46 of H factor over his career and over 200 presentations in international conferences. His breakthrough researches have been highlighted over 80 times by various scientific magazines such as Nature, SPIE newsroom, IEEE SPECTRUM, EE Times, Semiconductor Today, Materials Today, Chemical & Engineering News, and Nano Today. Visit his web for more information (nanoenergy.kaust.edu.sa).

Cheryl Wills (clwills@eng.ucsd.edu)