The mm-wave frequency spectrum has gained prominence in recent years to support high-data rate energy efficient wireless communication for the future 5G standards and other IoT applications. Mass-deployment and adoption of such technologies rely on silicon integration of the mm-wave transceivers. However, achieving high data-rates at mm-wave frequencies over long distance wireless links require efficient Watt-level transmitters and power amplifiers – a challenge in low breakdown voltage silicon technologies.
In this presentation, waveform engineering concepts at mm-wave frequencies to realize high power, efficient switching power amplifiers in silicon technologies will be discussed. Transistor stacking in mm-wave switching power amplifiers for enhanced power generation, its benefits, drawbacks and mitigation techniques will be presented. A dynamic load-modulation technique using dual-state transmission lines will be discussed to demonstrate improved efficiency at backed-off power levels in a Watt-level mm-wave silicon digital power amplifier.
Mr. Datta was the recipient of the USC Provost Fellowship (2010-2014), IEEE Microwave Theory and Techniques Society (MTTS) Graduate Fellowship Award in 2014, and IEEE Solid-State Circuits Society (SSCS) Pre-doctoral Achievement Award in 2014. Mr. Datta was a Ming Hsieh Institute Scholar in 2014-2015.